Electron and Hole Conductivity in CuInS₂

Authors

David C. Look, Wright State University - Main CampusFollow
Jose C. Manthuruthil

Document Type

Article

Publication Date

1976

Abstract

Single crystals of CuInS₂ have been grown from the melt and annealed in In or S to produce good n- or p-type conductivity, respectively. Two donor levels, one shallow and one deep (0.35 eV), and one acceptor level at 0.15 eV are identified. The hole-mobility data are best fitted with an effective mass , which can be explained by simple, two band . theory if the valence band has appreciable d character. Above 300°K, the hole mobility falls rapidly, evidently due to multiband conduction and/or interband scattering between the nondegenerate and degenerate valence bands. The conduction band mobility appears to be dominated, in many samples, by large concentrations ( >10¹⁸cm⁻³) of native donors and acceptors, which are closely compensated.

Repository Citation

Look, D. C., & Manthuruthil, J. C. (1976). Electron and Hole Conductivity in CuInS₂. Journal of Physics and Chemistry of Solids, 37 (2), 173-180.
https://corescholar.libraries.wright.edu/physics/620

DOI

10.1016/0022-3697(76)90157-8