Electrical Characterization of 1.8 MeV Proton-Bombarded ZnO

Authors

F. D. Auret
S. A. Goodman
M. Hayes
M. J. Legodi
H. A. van Laarhoven
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

11-1-2001

Abstract

We report on the electrical characterization of single-crystal ZnO and Au Schottky contacts formed thereon before and after bombarding them with 1.8 MeV protons. From capacitance–voltage measurements, we found that ZnO is remarkably resistant to high-energy proton bombardment and that each incident proton removes about two orders of magnitude less carriers than in GaN. Deep level transient spectroscopy indicates a similar effect: the two electron traps detected are introduced in extremely low rates. One possible interpretation of these results is that the primary radiation-induced defects in ZnO may be unstable at room temperature and anneal out without leaving harmful defects that are responsible for carrier compensation.

Comments

Copyright © 2001, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 79.19, and may be found at http://apl.aip.org/resource/1/applab/v79/i19/p3074_s1

Repository Citation

Auret, F. D., Goodman, S. A., Hayes, M., Legodi, M. J., van Laarhoven, H. A., & Look, D. C. (2001). Electrical Characterization of 1.8 MeV Proton-Bombarded ZnO. Applied Physics Letters, 79 (19), 3074-3076.
https://corescholar.libraries.wright.edu/physics/73

DOI

10.1063/1.1415050