Electrical Characterization of Vapor-Phase-Grown Single-Crystal ZnO

Authors

F. D. Auret
S. A. Goodman
M. J. Legodi
W. E. Meyer
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

2-1-2002

Abstract

Gold Schottky-barrier diodes (SBDs) were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels at 0.12 eV and 0.57 below the conduction band. Comparison with temperature-dependent Hall measurements suggests that the 0.12 eV level has a temperature activated capture cross section with a capture barrier of about 0.06 eV and that it may significantly contribute to the free-carrier density. Based on the concentrations of defects other than this shallow donor, we conclude that the quality of the vapor-phase-grown ZnO studied here supercedes that of other single-crystal ZnO reported up to now.

Comments

Copyright © 2002, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 80.8, and may be found at http://apl.aip.org/resource/1/applab/v80/i8/p1340_s1

Repository Citation

Auret, F. D., Goodman, S. A., Legodi, M. J., Meyer, W. E., & Look, D. C. (2002). Electrical Characterization of Vapor-Phase-Grown Single-Crystal ZnO. Applied Physics Letters, 80 (8), 1340-1342.
https://corescholar.libraries.wright.edu/physics/78

DOI

10.1063/1.1452781