Si Doping of High-Al-Mole Fraction AlxGa1-xN Alloys with rf Plasma-Induced Molecular-Beam-Epitaxy

Authors

Jeonghyun Hwang
William J. Schaff
Lester F. Eastman
Shawn T. Bradley
Leonard J. Brillson
David C. Look, Wright State University - Main CampusFollow
J. Wu
Wladek Walukiewicz
Madalina Furis
Alexander N. Cartwright

Document Type

Article

Publication Date

12-1-2002

Abstract

Very high levels of n-type doping of Al_xGa_1−xN alloys were recently achieved by rf plasma-induced molecular-beam epitaxy on sapphire substrates and Si as a dopant. Electron concentrations were obtained up to 1.25×10²⁰ cm⁻³ when the Al mole fraction was 50%, and 8.5×10¹⁹ cm⁻³ electrons were measured even when the Al mole fraction was 80%. Other material properties were determined by optical absorption, photoluminescence, cathodoluminescence, x-ray diffraction, and atomic force microscopy measurements and high optical and morphological qualities were shown.

Comments

Copyright © 2002, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 81.27, and may be found at http://apl.aip.org/resource/1/applab/v81/i27/p5192_s1

Repository Citation

Hwang, J., Schaff, W. J., Eastman, L. F., Bradley, S. T., Brillson, L. J., Look, D. C., Wu, J., Walukiewicz, W., Furis, M., & Cartwright, A. N. (2002). Si Doping of High-Al-Mole Fraction AlxGa1-xN Alloys with rf Plasma-Induced Molecular-Beam-Epitaxy. Applied Physics Letters, 81 (27), 5192-5194.
https://corescholar.libraries.wright.edu/physics/80

DOI

10.1063/1.1534395