Document Type
Article
Publication Date
6-1-1992
Abstract
Inverse problems arising from the identification of transistor contact resistivity and contact window location are studied. A one-point boundary measurement of the potential is shown to be sufficient to identify each from a one-parameter monotone family, and such identification is both stable and continuously dependent on the parameter. For a nonmonotone family of locations with resistivity given, similar results are obtained for measurement made on almost all boundary points.
Repository Citation
Fang, W.,
& Cumberbatch, E.
(1992). Inverse Problems for Metal Oxide Semiconductor Field-Effect Transistor Contact Resistivity. SIAM Journal on Applied Mathematics, 52 (3), 699-709.
https://corescholar.libraries.wright.edu/math/461
DOI
10.1137/0152039
Comments
This work is licensed under a Creative Commons Attribution 4.0 International License.