Superior Growth, Yield, Repeatability, and Switching Performance in Gan-Based Resonant Tunneling Diodes
Document Type
Article
Publication Date
3-16-2020
Abstract
We report the direct measurement of record fast switching speeds in GaN/AlN resonant tunneling diodes (RTDs). The devices, grown by plasma-assisted molecular-beam epitaxy, displayed three repeatable negative differential resistance (NDR) regions below a bias of +6 V. A room temperature peak-to-valley current ratio (PVCR) > 2 was observed, which represents a marked improvement over recent reports. Measurements carried out on hundreds of devices, of varying sizes, revealed a yield of ∼90%. Repeatability measurements consisting of 3000 sweeps resulted in a standard deviation, relative to the mean, of < 0.1%. Temperature dependent measurements combined with non-equilibrium Green's function based quantum transport simulations suggest the presence of both three-dimensional (3D) and two-dimensional (2D) emitters, giving rise to three NDR regions. Finally, a valley current density vs perimeter-to-area-ratio study indicates the presence of a surface leakage current mechanism, which reduces the PVCR.
Repository Citation
Growden, T.,
Storm, D.,
Cornuelle, E.,
Brown, E.,
Zhang, W.,
Downey, B.,
Roussos, J.,
Cronk, N.,
Ruppalt, L.,
Champlain, J.,
Berger, P.,
& Meyer, D.
(2020). Superior Growth, Yield, Repeatability, and Switching Performance in Gan-Based Resonant Tunneling Diodes. Applied Physics Letters, 116, 113501.
https://corescholar.libraries.wright.edu/physics/1063
DOI
10.1063/1.5139219
