Investigation of Switching Time in GaN/Aln Resonant Tunneling Diodes by Experiments and P-Spice Models
Document Type
Article
Publication Date
1-1-2020
Abstract
The experimental and simulated switching behavior across the negative differential resistance (NDR) region of GaN/AlN double-barrier resonant tunneling diodes (RTDs) is presented. The shortest 10%-90% experimental switching time was ∼55 ps. The experimental results are also studied with P-SPICE circuit models, which show that the relatively low peak-to-valley current ratio (∼1.5), relatively high specific contact resistance (≥1 × 10-6 Ω-cm2), and relatively large specific capacitance limit the switching time.
Repository Citation
Zhang, W.,
Growden, T.,
Storm, D.,
Meyer, D.,
Berger, P.,
& Brown, E.
(2020). Investigation of Switching Time in GaN/Aln Resonant Tunneling Diodes by Experiments and P-Spice Models. IEEE Transactions on Electron Devices, 67 (1), 75-79.
https://corescholar.libraries.wright.edu/physics/1064
DOI
10.1109/TED.2019.2955360
