AlN/GaN/AlN Resonant Tunneling Diodes Grown by RF-Plasma Assisted Molecular Beam Epitaxy on Freestanding GaN
The authors report the growth by rf-plasma assisted molecular beam epitaxy of AlN/GaN/AlN resonant tunneling diodes which exhibit stable, repeatable, and hysteresis-free negative differential resistance (NDR) at room temperature for more than 1000 bias sweeps between −2.5 and +5.5 V. The device layers were grown on freestanding, Ga-polar GaN substrates grown by hydride vapor phase epitaxy and having a density of threading dislocations between 106 and 107cm−2. The authors speculate that the repeatable NDR is facilitated by the low-dislocation density substrates.
& Meyer, D.
(2017). AlN/GaN/AlN Resonant Tunneling Diodes Grown by RF-Plasma Assisted Molecular Beam Epitaxy on Freestanding GaN. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 35, 02B110.