Ground and Excited State Exciton Spectra from GaN Grown by Molecular-Beam Epitaxy

Authors

D. C. Reynolds
David C. Look, Wright State University - Main CampusFollow
W. Kim
Ö. Aktas
A. Botchkarev
A. Salvador
H. Morkoç
D. N. Talwar

Document Type

Article

Publication Date

7-1-1996

Abstract

The emission and reflection spectra of GaN have been investigated in the intrinsic region and the data have been interpreted in terms of the wurtzite crystal band structure. Three intrinsic exciton transitions have been observed, one associated with each of the valence bands. Exciton excited states associated with the two top valence bands were also observed. The exciton binding energies, the band-gap energies, and the exciton Bohr radii are all reported along with the dielectric constant and the spin-orbit and crystal-field parameters for GaN.

Comments

Copyright © 1996, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 80.1, and may be found at http://jap.aip.org/resource/1/japiau/v80/i1/p594_s1

Repository Citation

Reynolds, D. C., Look, D. C., Kim, W., Aktas, Ö., Botchkarev, A., Salvador, A., Morkoç, H., & Talwar, D. N. (1996). Ground and Excited State Exciton Spectra from GaN Grown by Molecular-Beam Epitaxy. Journal of Applied Physics, 80 (1), 594-596.
https://corescholar.libraries.wright.edu/physics/132

DOI

10.1063/1.362724