Two low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted as longitudinal optical-phonon replicas of free excitons, donor-bound excitons, or acceptor-bound excitons, are reinterpreted as acceptor-bound excitons (A0X’s) collapsing to n=2 and n=3 excited states, respectively, of the acceptors involved. Application of this model to two sets of A0X-related lines in hydride-vapor-phase-grown GaN gives acceptor energies of 85±1, and 115±1 meV, respectively. The existence of such shallow acceptor states, if confirmed, is of great technological importance.
Reynolds, D. C.,
Look, D. C.,
& Molnar, R. J.
(2001). Evidence for Shallow Acceptors in GaN. Journal of Applied Physics, 89 (11), 6272-6274.
Copyright © 2001, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 89.11, and may be found at http://jap.aip.org/resource/1/japiau/v89/i11/p6272_s1