Self-Compensation in Semiconductors: The Zn Vacancy in Ga-Doped ZnO

Authors

David C. Look, Wright State University - Main CampusFollow
K. D. Leedy
L. Vines
B. G. Svensson
A. Zubiaga
F. Tuomisto
Daniel R. Doutt
L. J. Brillson

Document Type

Article

Publication Date

9-1-2011

Abstract

Self-compensation, the tendency of a crystal to lower its energy by forming point defects to counter the effects of a dopant, is here quantitatively proven. Based on a new theoretical formalism and several different experimental techniques, we demonstrate that the addition of 1.4 × 10²¹-cm⁻³ Ga donors in ZnO causes the lattice to form 1.7 × 10²⁰-cm⁻³ Zn-vacancy acceptors. The calculated V_Zn formation energy of 0.2 eV is consistent with predictions from density functional theory. Our formalism is of general validity and can be used to investigate self-compensation in any degenerate semiconductor material.

Comments

The original publication is available at http://prb.aps.org/abstract/PRB/v84/i11/e115202

Repository Citation

Look, D. C., Leedy, K. D., Vines, L., Svensson, B. G., Zubiaga, A., Tuomisto, F., Doutt, D. R., & Brillson, L. J. (2011). Self-Compensation in Semiconductors: The Zn Vacancy in Ga-Doped ZnO. Physical Review B, 84 (11), 115202.
https://corescholar.libraries.wright.edu/physics/183

DOI

10.1103/PhysRevB.84.115202