Vapor phase epitaxial gallium arsenide (GaAs) layers, with lower compensation ratios than any reported heretofore, have been reproducibly grown by the Ga/H2/AsCl3 method. One of these samples has been studied extensively by electrical measurements and shows an acceptor concentration of (2.0 ± 0.7)X1013 cm-3 , and a compensation rate of NA/ND = 0.06 ± 0.02. These numbers are supported by magnetophotothermal spectroscopy and photoluminescence measurements. The preparation involves growth on [211A] substrates, and a pregrowth bakeout of the Ga source, which results in a significantly lower Zn acceptor concentration in the layer. These results have important implications for various compensation mechanisms which have been proposed for GaAs.
Colter, P. C.,
Look, D. C.,
& Reynolds, D. C.
(1983). Low Compensation Vapor-Phase Epitaxial Gallium-Arsenide. Applied Physics Letters, 43 (3), 282-284.