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Vapor phase epitaxial gallium arsenide (GaAs) layers, with lower compensation ratios than any reported heretofore, have been reproducibly grown by the Ga/H2/AsCl3 method. One of these samples has been studied extensively by electrical measurements and shows an acceptor concentration of (2.0 ± 0.7)X1013 cm-3 , and a compensation rate of NA/ND = 0.06 ± 0.02. These numbers are supported by magnetophotothermal spectroscopy and photoluminescence measurements. The preparation involves growth on [211A] substrates, and a pregrowth bakeout of the Ga source, which results in a significantly lower Zn acceptor concentration in the layer. These results have important implications for various compensation mechanisms which have been proposed for GaAs.


Copyright © 1983, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 43.3, and may be found at



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