Rapid thermally annealed silicon‐implanted x‐cut α‐quartz samples have been examined by Rutherford backscattering and Raman microprobe spectroscopy. The data indicate that the silicon has diffused at 1200 °C to form a buried layer of crystallites of size 1–10 μm. The crystallites are preferentially oriented and under substantial stress.
Ramabadran, U. B.,
Jackson, H. E.,
& Farlow, G. C.
(1989). Silicon Crystallite formation in Ion-Implanted Quartz. Applied Physics Letters, 55 (12), 1199-1201.
Copyright © 1989, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 55.12, and may be found at http://apl.aip.org/resource/1/applab/v55/i12/p1199_s1