Identification of Cu-Related Thermally Stimulated Current Trap in Undoped Semi-insulating GaAs
In the thermally stimulated current spectra of semi-insulating GaAs, a unique trap T-a at 170K is sometimes observed. The activation energy and capture cross section of T-a are 0.43 eV and 3.7 x 10(-15) cm(2), respectively. Based on a good correlation with the Cu-related photoluminescence emission at 1.36 eV and the Cu-related deep level transient spectroscopy hole traps HL4 and HB4, we argue that T-a is a Cu-related hole-trap.
& Jones, R. L.
(1997). Identification of Cu-Related Thermally Stimulated Current Trap in Undoped Semi-insulating GaAs. Journal of Electronic Materials, 26 (12), L29-L31.