Identification of the 0.15 eV Donor Defect in Bulk GaAs
Find this in a Library
The well-known 0.15-eV Hall-effect center appearing in bulk, n-type GaAs quenches under IR illumination and recovers via an Auger-like process at a rate similar to the Auger rate of EL2. On the other hand, the 0.15-eV VAs-related center produced by 1-MeV electron irradiation does not quench at all. Based on these data and a detailed theoretical analysis by Baraff and Schluter, we argue that the bulk 0.15-eV center is related to the AsGa-VAs defect or a related complex.
& Look, D. C.
(1994). Identification of the 0.15 eV Donor Defect in Bulk GaAs. MRS Proceedings, 325, 431.
Presented at the 1993 MRS Fall Meeting, Boston, MA.
Copyright © Materials Research Society 1994.