High Electron Mobility in Free-Standing GaN Substrates
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High peak electron mobilities were observed in free-standing c-plane GaN substrates. Two layers, a low mobility degenerate layer and a high mobility bulk layer, were present in these samples. The carrier concentrations and mobilities for the layers were extracted using two methods: 1) magnetic field dependent Hall effect analysis and 2) a simple two carrier model with the assumption that one of the layers is degenerate. In addition, measurements were performed after etching away the degenerate layer. The mobility of the bulk layer is found to peak at nearly 8000 cm2/Vs at 60K using the magnetic field dependent Hall effect data. Record room temperature mobility for bulk GaN of 1190 cm2/V s was measured.
Look, D. C.,
Sizelove, J. R.,
Mitchel, W. C.,
Callahan, M. J.,
Bliss, D. F.,
Bouthillette, L. O.,
Sung, C. M.,
Park, S. S.,
& Lee, K. Y.
(2000). High Electron Mobility in Free-Standing GaN Substrates. MRS Proceedings, 639, G7.2.
Presented at the 2000 MRS Fall Meeting, Boston, MA.
Copyright © Materials Research Society 2001.