Phonon Replicas Associated With Donor-Bound-Excitons in GaN
Phonon sidebands have been observed on the donor-bound-exciton transitions in two samples of GaN grown by hydride vapor phase epitaxy. The phonon energies of one of the sidebands were representative of transverse optical phonons. From this transition an A(1) (TO) phonon energy of 533 cm(-1) and an E-1 (TO) phonon energy of 559 cm(-1) was measured. Another sideband showed the coupling to occur through the longitudinal optical phonons. In this case an A(1) (LO) phonon energy of 734 cm(-1) was measured. Multiphonon coupling was also observed. (C) 1998 Elsevier Science Ltd. All rights reserved.
Reynolds, D. C.,
Look, D. C.,
& Molnar, R. J.
(1998). Phonon Replicas Associated With Donor-Bound-Excitons in GaN. Solid State Communications, 108 (1), 49-52.