Screening of Excitons in GaN Crystals
Document Type
Article
Publication Date
1998
Abstract
A study was made of the screening of excitons in a GaN sample, which was simultaneously excited with a HeCd laser and an Ar+ ion laser. The Ar+ ion laser excites carriers in a two step process, involving an impurity or defect. A comparison with transport measurements shows that the photoluminescence is probably emitted from a higher-quality portion of the sample than that which conducts the current.
Repository Citation
Reynolds, D. C.,
Look, D. C.,
Jogai, B.,
& Molnar, R. J.
(1998). Screening of Excitons in GaN Crystals. Journal of Physics-Condensed Matter, 10 (25), 5577-5581.
https://corescholar.libraries.wright.edu/physics/430
DOI
10.1088/0953-8984/10/25/009
