Title

Electrical Characterization of Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots by Deep Level Transient Spectroscopy

Document Type

Article

Publication Date

1999

Abstract

We have investigated electron emission from self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular-beam epitaxy (MBE). Through detailed deep level transient spectroscopy comparisons between the QD sample and a reference sample, we determine that trap D, with an activation energy of 100 meV and an apparent capture cross section of 5.4 x 10(-18) cm(2), is associated with an electron quantum level in the In0.5Ga0.5As/GaAs QDs. The other deep levels observed, M1, M3, M4, and M6, are common to GaAs grown by MBE.

DOI

10.1007/s11664-999-0210-z