Electrical and Optical Properties of Annealed Semi-Insulating GaAs Grown by Vertical Zone Melt Technique

Authors

Zhaoqiang -Q FangFollow
Donald C. Reynolds
David C. Look, Wright State University - Main CampusFollow
M. G. Mier
Rex L. Jones
Richard L. Henry

Document Type

Conference Proceeding

Publication Date

1999

Abstract

Electrical and optical properties of undoped semi-insulating GaAs grown by the vertical zone melt (VZM) technique and annealed at 950°C under As overpressure have been characterized. The 950°C annealing significantly improves the uniformity and increases both EL2 concentration and mobility. Cu incorporation into the VZM materials has been observed.

Comments

Presented at the 10th Conference on Semiconducting and Insulating Materials, Berkeley, CA.

Repository Citation

Fang, Z., Reynolds, D. C., Look, D. C., Mier, M. G., Jones, R. L., & Henry, R. L. (1999). Electrical and Optical Properties of Annealed Semi-Insulating GaAs Grown by Vertical Zone Melt Technique. Proceedings of the 10th Conference on Semiconducting and Insulating Materials, 25-28.
https://corescholar.libraries.wright.edu/physics/692

DOI

10.1109/SIM.1998.785069