Shifted X-Ray Photoelectron Peak in Molecular-Beam Epitaxial GaAs Grown at 200 Degrees C

Authors

David C. Look, Wright State University - Main CampusFollow
J. T. Grant
J. R. Sizelove

Document Type

Article

Publication Date

9-1-1992

Abstract

X‐ray photoelectron spectroscopic results show that molecular beam epitaxial GaAs grown at 200 °C has a reduced effective surface potential energy, about 0.5 eV, compared with the usual 0.7 eV. A Poisson analysis of the data, using parameters from Hall effect and absorption measurements, requires that the Fermi‐level‐controlling defect in this material must have a significantly lower activation energy than that of EL2, an unexpected result.

Comments

Copyright © 1992, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 61.11, and may be found at http://apl.aip.org/resource/1/applab/v61/i11/p1329_s1

Repository Citation

Look, D. C., Grant, J. T., & Sizelove, J. R. (1992). Shifted X-Ray Photoelectron Peak in Molecular-Beam Epitaxial GaAs Grown at 200 Degrees C. Applied Physics Letters, 61 (11), 1329-1331.
https://corescholar.libraries.wright.edu/physics/41

DOI

10.1063/1.107582