Ohmic Contact formation on GaAs Layers with Low-Temperature Molecular-Beam Epitaxial Caps
Document Type
Article
Publication Date
5-1992
Abstract
Molecular-beam epitaxial GaAs layers, grown at 200 or 400-degrees-C, show great promise as passivating or insulating films on top of standard n-type MESFET layers (n congruent-to 1.6 x 10(17) cm-3) grown at normal temperatures (580-600-degrees-C). Here we show that ohmic contacts, with specific contact resistances of 10(-6) OMEGA.cm2, are easily fabricated without removing the cap layers. Preliminary results on capped p-type MESFET layers (p congruent-to 1.5 x 10(17) cm-3) suggest that a 200-degrees cap may degrade the contact resistance by a factor of 3-10.
Repository Citation
Look C.,
Yamamoto, H.,
& Nakano, K.
(1992). Ohmic Contact formation on GaAs Layers with Low-Temperature Molecular-Beam Epitaxial Caps. IEEE Transactions on Electron Devices, 39 (5), 1237-1239.
https://corescholar.libraries.wright.edu/physics/379
DOI
10.1109/16.129112
