ZnO-Based MIS Diodes Prepared by Ion Implantation
A ZnO-based metal-insulator-semiconductor (MIS) type diode, with low leakage and a threshold voltage of about 3 V, has been fabricated using an isolation layer achieved by N+ ion implantation. Ultraviolet light emission peaking at 388 nm and with full width of half maximum 0.12 eV has been observed under forward bias at room temperature. The properties of this emission have been studied as a function of injection current.
Alivov, Y. I.,
Zinenko, V. I.,
Agafonov, Y. A.,
Pustovit, A. N.,
Look, D. C.,
Chukichev, M. V.,
Ataev, B. M.,
& Mamedov, V. V.
(2003). ZnO-Based MIS Diodes Prepared by Ion Implantation. Physics of Low Dimensional Structures (9-10), 83-88.
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