ZnO-Based MIS Diodes Prepared by Ion Implantation

Authors

Ya I. Alivov
V. I. Zinenko
Y. A. Agafonov
A. N. Pustovit
David C. Look, Wright State University - Main CampusFollow
M. V. Chukichev
B. M. Ataev
V. V. Mamedov

Document Type

Article

Publication Date

2003

Abstract

A ZnO-based metal-insulator-semiconductor (MIS) type diode, with low leakage and a threshold voltage of about 3 V, has been fabricated using an isolation layer achieved by N+ ion implantation. Ultraviolet light emission peaking at 388 nm and with full width of half maximum 0.12 eV has been observed under forward bias at room temperature. The properties of this emission have been studied as a function of injection current.

Repository Citation

Alivov, Y. I., Zinenko, V. I., Agafonov, Y. A., Pustovit, A. N., Look, D. C., Chukichev, M. V., Ataev, B. M., & Mamedov, V. V. (2003). ZnO-Based MIS Diodes Prepared by Ion Implantation. Physics of Low Dimensional Structures (9-10), 83-88.
https://corescholar.libraries.wright.edu/physics/461