Electrochemical Capacitance-Voltage Analysis of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Material

Authors

C. E. Stutz
B. Jogai
David C. Look, Wright State University - Main CampusFollow
J. M. Ballingall
T. J. RogersFollow

Document Type

Article

Publication Date

5-1-1994

Abstract

This work shows how electrochemical capacitance‐voltage (EC‐V) measurements can be used to evaluate delta‐doped pseudomorphic high electron mobility transistor material. These EC‐V measurements are compared with magnetic‐field‐dependent Hall effect (M‐Hall) measurements and a self‐consistent Poisson/k⋅p calculation of the band structure and electron concentration. The EC‐V technique can clearly delineate the cap layer, the delta‐doped layer, and the In_xGa_1−xAs channel layer, whereas the M‐Hall method characterizes only the cap and In_xGa_1−xAs channel layers. The amount of electron charge seen by the EC‐V and M‐Hall measurements show good agreement with theory.

Comments

Copyright © 1994, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 64.20, and may be found at http://apl.aip.org/resource/1/applab/v64/i20/p2703_s1

Repository Citation

Stutz, C. E., Jogai, B., Look, D. C., Ballingall, J. M., & Rogers, T. J. (1994). Electrochemical Capacitance-Voltage Analysis of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Material. Applied Physics Letters, 64 (20), 2703-2705.
https://corescholar.libraries.wright.edu/physics/51

DOI

10.1063/1.111471