Low-Temperature Growth of High Resistivity GaAs by Photoassisted Metalorganic Chemical Vapor Deposition

Authors

J. C. Roberts
K. S. Boutros
S. M. Bedair
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

5-1-1994

Abstract

We report the photoassisted low‐temperature (LT) metalorganic chemical vapor deposition (MOCVD) of high resistivity GaAs. The undoped as‐grown GaAs exhibits a resistivity of ∼10⁶ Ω cm, which is the highest reported for undoped material grown in the MOCVD environment. Photoassisted growth of doped and undoped device quality GaAs has been achieved at a substrate temperature of 400 °C in a modified atmospheric pressure MOCVD reactor. By using silane as a dopant gas, the LT photoassisted doped films have high levels of doping and electron mobilities comparable to those achieved by MOCVD for growth temperatures, T_g≳600 °C.

Comments

Copyright © 1994, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 64.18, and may be found at http://apl.aip.org/resource/1/applab/v64/i18/p2397_s1

Repository Citation

Roberts, J. C., Boutros, K. S., Bedair, S. M., & Look, D. C. (1994). Low-Temperature Growth of High Resistivity GaAs by Photoassisted Metalorganic Chemical Vapor Deposition. Applied Physics Letters, 64 (18), 2397-2399.
https://corescholar.libraries.wright.edu/physics/50

DOI

10.1063/1.111626