We show that the usual Arrhenius analysis of the main electron-irradiation-induced defect trap in n-type GaN, observed by deep-level transient spectroscopy (DLTS), is not sufficiently accurate. Instead, an exact fitting of the DLTS spectrum for this trap reveals two components, each of which has a thermal energy near 60 meV, not the apparent 140–200 meV, as given in other DLTS studies. This result resolves the discrepancy between Hall-effect and DLTS determinations of the thermal energy of this defect center.
& Look, D. C.
(2000). On the Main Irradiation-Induced Defect in GaN. Applied Physics Letters, 76 (15), 2086-2088.