Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN

Authors

D. C. Reynolds
David C. Look, Wright State University - Main CampusFollow
B. Jogai

Document Type

Article

Publication Date

11-1-2000

Abstract

The energy positions of the optical transitions in both GaN and ZnO were investigated when the samples were excited simultaneously with a HeCd laser and an Ar⁺ ion laser. The increased number of free electrons excited by the Ar⁺ ion laser will effectively screen both the free exciton and bound exciton transitions, resulting in a blueshift. The increased number of free electrons also produces many-body effects, which lead to a reduction of the band gap energy and thus a redshift. The resultant of screening and renormalization results in a redshift of the optical transitions in ZnO but a nearly vanishing shift in GaN.

Comments

Copyright © 2000, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 88.10, and may be found at http://jap.aip.org/resource/1/japiau/v88/i10/p5760_s1

Repository Citation

Reynolds, D. C., Look, D. C., & Jogai, B. (2000). Combined Effects of Screening and Band Gap Renormalization on the Energy of Optical Transitions in ZnO and GaN. Journal of Applied Physics, 88 (10), 5760-5763.
https://corescholar.libraries.wright.edu/physics/145

DOI

10.1063/1.1320026