Deep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at EC−0.18 eV. The production rate is approximately 0.2 cm−1, lower than the rate of 1 cm−1 found for the N vacancy by Hall-effect studies. The defect trap cannot be firmly identified at this time. ©1998 American Institute of Physics.
Hemsky, J. W.,
Look, D. C.,
& Mack, M. P.
(1998). Electron-Irradiation-Induced Deep Level in n-Type GaN. Applied Physics Letters, 72 (4), 448-449.