Electron-Irradiation-Induced Deep Level in n-Type GaN

Authors

Z-Q. Fang
Joseph W. Hemsky, Wright State University - Main CampusFollow
David C. Look, Wright State University - Main CampusFollow
M. P. Mack

Document Type

Article

Publication Date

1-26-1998

Abstract

Deep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at E_C−0.18 eV. The production rate is approximately 0.2 cm⁻¹, lower than the rate of 1 cm⁻¹ found for the N vacancy by Hall-effect studies. The defect trap cannot be firmly identified at this time. ©1998 American Institute of Physics.

Comments

Copyright © 1998, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 72.4, and may be found at http://dx.doi.org/10.1063/1.120783.

Repository Citation

Fang, Z., Hemsky, J. W., Look, D. C., & Mack, M. P. (1998). Electron-Irradiation-Induced Deep Level in n-Type GaN. Applied Physics Letters, 72 (4), 448-449.
https://corescholar.libraries.wright.edu/physics/691

DOI

10.1063/1.120783