Title

Vacancy Defect Distributions in Bulk ZnO Crystals

Document Type

Conference Proceeding

Publication Date

7-2007

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Abstract

We have used positron annihilation spectroscopy to study vacancy defects in ZnO single crystals grown by various methods from both commercial and academic sources. The combination of positron lifetime and Doppler broadening techniques with theoretical calculations provides the means to deduce both the identities and the concentrations of the vacancies. The annihilation characteristics of the Zn and O vacancies have been determined by studying electronirradiated ZnO grown by the seeded vapor phase technique. The different ZnO samples were grown with the following techniques: the hydrothermal growth method, the seeded vapor phase technique, growth from melt (skull melting technique), and both conventional and contactless chemical vapor transport. We present a comparison of the vacancy defects and their concentrations in these materials.

Comments

Presented at the Proceedings of SPIE: Zinc Oxide and Devices II, San Jose, CA.

© (2007) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

DOI

10.1117/12.698902