The Effect of Si Doping on the Electrical Properties of B12As2 Thin Films on (0001) 6H-SiC Substrates

Authors

Zhou Xu
J. H. Edgar
David C. Look, Wright State University - Main CampusFollow
S. Baumann
R. J. Bleiler
S. H. Wang
S. E. Mohney

Document Type

Article

Publication Date

3-1-2007

Abstract

The ability to control the resistivity of the wide band gap semiconductor B₁₂As₂ by doping with silicon was verified. The electrical properties of nominally undoped and Si-doped rhombohedral B₁₂As₂ thin films on semi-insulating 6H-SiC (0001) substrates prepared by chemical vapor deposition were subjected to Hall effect measurements. Varying the Si concentration in the B₁₂As₂ thin films from 7×10¹⁸ to 7×10²¹ at./cm³ (as measured by secondary ion mass spectrometry) decreased the resistivities of the p-type B₁₂As₂ films from 2×10⁵ to 10 Ω cm. The resistivities of the B₁₂As₂ films were decreased by one to two orders of magnitude after rapid thermal annealing for 30 s in argon. The spatial distribution of the hydrogen concentration was measured before and after annealing. No changes were detected, casting doubt on hydrogen as being the cause for the change in the resistivities of the B₁₂As₂ films with annealing.

Comments

Copyright © 2007, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 101.5, and may be found at http://jap.aip.org/resource/1/japiau/v101/i5/p053710_s1

Repository Citation

Xu, Z., Edgar, J. H., Look, D. C., Baumann, S., Bleiler, R. J., Wang, S. H., & Mohney, S. E. (2007). The Effect of Si Doping on the Electrical Properties of B12As2 Thin Films on (0001) 6H-SiC Substrates. Journal of Applied Physics, 101 (5), 53710.
https://corescholar.libraries.wright.edu/physics/157

DOI

10.1063/1.2437687