Donor and Acceptor Concentrations in Degenerate InN

Authors

David C. Look, Wright State University - Main CampusFollow
H. Lu
William J. Schaff
J. Jasinski
Z. Liliental-Weber

Document Type

Article

Publication Date

1-1-2002

Abstract

A formalism is presented to determine donor (N_D) and acceptor (N_A) concentrations in wurtzitic InN characterized by degenerate carrier concentration (n) and mobility (μ). The theory includes scattering not only by charged point defects and impurities, but also by charged threading dislocations, of concentration N_dis. For a 0.45-μm-thick InN layer grown on Al₂O₃ by molecular beam epitaxy, having N_dis = 5×10¹⁰ cm⁻², determined by transmission electron microscopy, n(20 K) = 3.5×10¹⁸ cm⁻³ and μ(20 K) = 1055 cm²/V s, determined by Hall effect measurements, the fitted values are N_D = 4.7×10¹⁸ cm⁻³ and N_A = 1.2×10¹⁸ cm⁻³. The identities of the donors and acceptors are not known, although a comparison of N_D with analytical data, and also with calculations of defect formation energies, suggests that a potential candidate for the dominant donor is H.

Comments

Copyright © 2002, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 80.2, and may be found at http://apl.aip.org/applab/v80/i2/p258_s1

Repository Citation

Look, D. C., Lu, H., Schaff, W. J., Jasinski, J., & Liliental-Weber, Z. (2002). Donor and Acceptor Concentrations in Degenerate InN. Applied Physics Letters, 80 (2), 258-260.
https://corescholar.libraries.wright.edu/physics/76

DOI

10.1063/1.1432742