Characterization of Homoepitaxial p-Type ZnO Grown by Molecular Beam Epitaxy

Authors

David C. Look, Wright State University - Main CampusFollow
D. C. ReynoldsFollow
C. W. LittonFollow
R. L. JonesFollow
D. B. Eason
G. CantwellFollow

Document Type

Article

Publication Date

9-1-2002

Abstract

An N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating ZnO substrate. Hall-effect and conductivity measurements on the layer give: resistivity = 4×10¹ Ω cm; hole mobility = 2 cm²/V s; and hole concentration = 9×10¹⁶ cm⁻³. Photoluminescence measurements in this N-doped layer show a much stronger peak near 3.32 eV (probably due to neutral acceptor bound excitons), than at 3.36 eV (neutral donor bound excitons), whereas the opposite is true in undoped ZnO. Calibrated, secondary-ion mass spectroscopy measurements show an N surface concentration of about 10¹⁹ cm⁻³ in the N-doped sample, but only about 10¹⁷ cm⁻³ in the undoped sample.

Comments

Copyright © 2002, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 81.10, and may be found at http://apl.aip.org/resource/1/applab/v81/i10/p1830_s1

Repository Citation

Look, D. C., Reynolds, D. C., Litton, C. W., Jones, R. L., Eason, D. B., & Cantwell, G. (2002). Characterization of Homoepitaxial p-Type ZnO Grown by Molecular Beam Epitaxy. Applied Physics Letters, 81 (10), 1830-1832.
https://corescholar.libraries.wright.edu/physics/79

DOI

10.1063/1.1504875