In-Plane Strain and Strain Relaxation in Laterally Patterned Periodic Arrays of Si/SiGe Quantum Wires and Dot Arrays
Document Type
Article
Publication Date
8-10-1998
Identifier/URL
41633739 (Pure); 0010113751 (Scopus)
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Abstract
The depth dependent strain relaxation in photolithographically defined and reactive ion etched Si/SiGe quantum wire and dot arrays is determined by high resolution grazing incidence x-ray diffraction. The laterally periodic structures were aligned along two orthogonal [110] and [1̄10] directions on the (001) surface. By recording reciprocal space maps around the (220) and (2̄20) reciprocal lattice points, the shape and in-plane strain could be determined independently of each other. Using triple axis diffractometry and changing the effective penetration depth of the x-ray radiation between 5 and 300 nm the strain relaxation in the wires and dots could be determined depth resolved.
Repository Citation
Darowski, N.,
Pietsch, U.,
Zhuang, Y.,
Zerlauth, S.,
Bauer, G.,
Lübbert, D.,
& Baumbach, T.
(1998). In-Plane Strain and Strain Relaxation in Laterally Patterned Periodic Arrays of Si/SiGe Quantum Wires and Dot Arrays. Applied Physics Letters, 73q (6), 806-808.
https://corescholar.libraries.wright.edu/ee/132
DOI
10.1063/1.122008
