Henry Chen (Committee Member), Marian K. Kazimierczuk (Advisor), Saiyu Ren (Committee Member)
Master of Science in Engineering (MSEgr)
Present day applications using power electronic converters are focusing towards improving the speed, efficiency, and robustness. This led to the implementation of new devices in such converters where speed and efficiency are of concern. As silicon (Si) based power devices are approaching their operational performance limits with respect to speed, it is essential to analyze the properties of new devices, which are capable of replacing silicon based devices. Wide band-gap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are such materials, whose material properties show promising advantages for power electronic applications.
This thesis focuses on the comparison of Si, SiC, and GaN based power devices. A detailed comparison in terms of the material performance based on their figures-of-merit will be discussed. In this thesis, a performance evaluation of Si, SiC, and GaN based power devices used as a high-side switch in a buck DC-DC converter will be performed. A buck converter having specifications: output voltage of 12 V and output power of 120 W. Initially, a design example for switching frequency of 100 kHz will be discussed. Further, an evaluation of the same for increase in switching frequencies will be performed. Finally, analyses of the power loss and efficiency of these devices will be made along with its validation using PSpice, SABER and MATLAB simulation software. It will be shown that the theoretical performance analyses are in accordance with the obtained simulated results. Finally, it will be shown that GaN based power devices have improved operational capabilities at high frequencies than those of Si and SiC.
Department or Program
Department of Electrical Engineering
Year Degree Awarded
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