Hong Huang, Ph.D. (Advisor); Gregory Kozlowski, Ph.D., D.Sc. (Committee Member); John Boeckl, Ph.D. (Committee Member)
Master of Science in Renewable and Clean Energy Engineering (MSRCE)
Due to the large band gap of β-Ga2O3 and recent improvements toward high quality native substrates and the ability to shallow dope epitaxial β-Ga2O3 it is an attractive material for applications in power electronic devices. Such devices require advances in the areas of thin film growth and carrier concentration control to deliver high mobility films appropriate for the device structures. Transmission electron microscopy (TEM) analysis can provide information concerning doping, crystal structure, and internal strain which will be valuable to assess the role of defects and impurities on the transport properties for feedback to optimize the bulk and epitaxial growth processes. The objective of this work is to fabricate high-quality TEM specimens with the help of dual-beam Focused Ion Beam/Scanning Electron Microscopy (FIB/SEM) to study the quality of Si-doped β-Ga2O3 homoepitaxial films grown by pulsed laser deposition and to analyze the nanoscale features in the films. Final thinning procedures were developed to enable observation of tensile strain attributed to the Si dopant level. These results are important for improving the thin film growth towards nanoscale device design and fabrication.
Year Degree Awarded
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