Evidence of Intrinsic Double Acceptor in GaAs

Authors

Phil Won YuFollow
W. C. Mithel
M. G. MierFollow
S. S. LiFollow
Weizhen Wang, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

1982

Abstract

Acceptors present in undoped p‐type conducting GaAs have been studied with photoluminescence, temperature‐dependent Hall measurements, deep level transient spectroscopy, and spark source mass spectrometry. It is shown that p‐type conduction is due to presence of the shallow acceptor C_As and the cation antisite double acceptor Ga_As. The first and second ionization energies determined for Ga_As are 77 and 230 meV from the valence‐band edge.

Comments

Copyright © 1982, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 41.6, and may be found at http://apl.aip.org/

Repository Citation

Yu, P. W., Mithel, W. C., Mier, M. G., Li, S. S., & Wang, W. (1982). Evidence of Intrinsic Double Acceptor in GaAs. Applied Physics Letters, 41 (6), 532-534.
https://corescholar.libraries.wright.edu/math/28

DOI

10.1063/1.93579