Properties of two-dimensional silicon grown on graphene substrate
Document Type
Article
Publication Date
9-7-2013
Abstract
The structure and electrical properties of two-dimensional (2D) sheets of silicon on a graphene substrate are studied using first-principles calculations. Two forms of corrugated silicon sheets are proposed to be energetically favorable structures. A shift of the Fermi energy level is found in both corrugated structures. Calculations of electron density show a weak coupling between the silicon layer and graphene substrate in both structures. The two forms of 2D silicon sheets turn out to be metallic and exhibit anisotropic transport properties. © 2013 AIP Publishing LLC.
Repository Citation
Zhou, R.,
Lew Yan Voon, L.,
& Zhuang, Y.
(2013). Properties of two-dimensional silicon grown on graphene substrate. Journal of Applied Physics, 114 (9).
https://corescholar.libraries.wright.edu/math/400
DOI
10.1063/1.4820473
