High quality factor RF inductors using low loss conductor featured with skin effect suppression for standard CMOS/BiCMOS
Document Type
Conference Proceeding
Publication Date
7-21-2011
Abstract
Integrated on-chip inductors with high quality factors are demonstrated using a low loss artificial conductor technology. This concept is based on an artificial layered meta-material comprising a bi-layered Ni80Fe 20/Cu superlattice. By properly tailoring the thickness ratio between the non-magnetic and magnetic metallic layers, the skin effects can be effectively suppressed within a wide frequency range, and can be tuned to a minimum at the frequency of interest up to 67 GHz. The quality factor has been increased by 41% of a 2nH inductor at 14.5GHz. The bandwidth of skin effect suppression is obtained between 10-18 GHz. © 2011 IEEE.
Repository Citation
Iramnaaz, I.,
Sandoval, T.,
Zhuang, Y.,
Schellevis, H.,
& Rejaei, B.
(2011). High quality factor RF inductors using low loss conductor featured with skin effect suppression for standard CMOS/BiCMOS. Proceedings - Electronic Components and Technology Conference, 163-168.
https://corescholar.libraries.wright.edu/math/408
DOI
10.1109/ECTC.2011.5898508
