Existence of Stationary Solutions to an Energy Drift-Diffusion Model for Semiconductor Devices

Authors

Weifu Fang, Wright State University - Main CampusFollow
Kazufumi Ito

Document Type

Article

Publication Date

10-1-2001

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Abstract

We analyze a mathematical model for semiconductors derived from the hydrodynamic model under the massless assumption. This model augments the classical drift-diffusion model by including temperature as a dependent variable. We establish the existence of stationary solutions near the equilibrium state.

Repository Citation

Fang, W., & Ito, K. (2001). Existence of Stationary Solutions to an Energy Drift-Diffusion Model for Semiconductor Devices. Mathematical Models and Methods in Applied Sciences, 11 (5), 827-840.
https://corescholar.libraries.wright.edu/math/438

DOI

10.1142/S0218202501001124