Existence of Stationary Solutions to an Energy Drift-Diffusion Model for Semiconductor Devices
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We analyze a mathematical model for semiconductors derived from the hydrodynamic model under the massless assumption. This model augments the classical drift-diffusion model by including temperature as a dependent variable. We establish the existence of stationary solutions near the equilibrium state.
& Ito, K.
(2001). Existence of Stationary Solutions to an Energy Drift-Diffusion Model for Semiconductor Devices. Mathematical Models and Methods in Applied Sciences, 11 (5), 827-840.