Document Type

Article

Publication Date

5-10-1999

Abstract

A nonlinear drift-diffusion model for semiconductors is analyzed to show the existence of non-vacuum global solutions and stationary solutions. The long time behavior of the solutions is studied by establishing the existence of an absorbing set and a compact attractor of the dynamical system. Parallel results on vacuum solutions are also obtained under weaker conditions on model parameters.

Comments

Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.

DOI

article/6fa16fd068e44d8bbe688f1e49314fc2


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