Document Type
Article
Publication Date
5-10-1999
Abstract
A nonlinear drift-diffusion model for semiconductors is analyzed to show the existence of non-vacuum global solutions and stationary solutions. The long time behavior of the solutions is studied by establishing the existence of an absorbing set and a compact attractor of the dynamical system. Parallel results on vacuum solutions are also obtained under weaker conditions on model parameters.
Repository Citation
Fang, W.,
& Ito, K.
(1999). Solutions to a Nonlinear Drift-Diffusion Model of Semiconductors. Electronic Journal of Differential Equations, 1999 (15), 1-38.
https://corescholar.libraries.wright.edu/math/445
DOI
article/6fa16fd068e44d8bbe688f1e49314fc2
Comments
This work is licensed under a Creative Commons Attribution 4.0 International License.