Global Solutions to the Time-Dependent Drift-Diffusion Semiconductor Equations

Authors

Weifu Fang, Wright State University - Main CampusFollow
Kazufumi Ito

Document Type

Article

Publication Date

12-2-1995

Abstract

In this paper, we study the global behavior of the time-dependent drift-diffusion model for semiconductor devices. Under certain assumptions on the mobilites, we first prove the existence of the global weak solutions with uniform L°° bounds. Then we show that the system, when considered ass a dynamical system, posses an absorbing set with respect to the Lt topology.

Repository Citation

Fang, W., & Ito, K. (1995). Global Solutions to the Time-Dependent Drift-Diffusion Semiconductor Equations. Journal of Differential Equations, 123 (2), 523-566.
https://corescholar.libraries.wright.edu/math/454

DOI

10.1006/jdeq.1995.1172