Highly Conductive ZnO Grown by Pulsed Laser Deposition in Pure Ar

Authors

Robin C. Scott
Kevin D. Leedy
Burhan Bayraktaroglu
David C. Look, Wright State University - Main CampusFollow
Yong-Hang Zhang

Document Type

Article

Publication Date

8-1-2010

Abstract

Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO₂/Si, Al₂O₃, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8×10⁻⁴ Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O₂ followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.

Comments

Copyright © 2010, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 97.7, and may be found at http://apl.aip.org/resource/1/applab/v97/i7/p072113_s1

Repository Citation

Scott, R. C., Leedy, K. D., Bayraktaroglu, B., Look, D. C., & Zhang, Y. (2010). Highly Conductive ZnO Grown by Pulsed Laser Deposition in Pure Ar. Applied Physics Letters, 97 (7), 72113.
https://corescholar.libraries.wright.edu/physics/101

DOI

10.1063/1.3481372