Two semi-insulating liquid-encapsulated Czochralski GaAs cyrstals, one Cr-doped and the other undoped, were annealed at 750°C for 15 min in flowing H2. Each sample converted to conducting p type in the near-surface region, due to the formation of acceptors at E∪ + 0.1 eV. We have studied this phenomenon by electrical, optical, and analytical profiling techniques, and have determined conclusively that the acceptors in our samples are not related to Mn accumulation, a commonly accepted explanation. It is argued that the O.I-e V center may arise from several possible sources, each exhibiting a VGa -like state at this energy.
Look, D. C.,
& Pomrenke, G. S.
(1983). A Study of the 0.1-EV Conversion Acceptor in GaAs. Journal of Applied Physics, 54 (6), 3249-3254.
Copyright © 1983, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 54.6, and may be found at http://jap.aip.org/resource/1/japiau/v54/i6/p3249_s1