Electrical-Properties of Low-Compensation GaAs

Authors

David C. Look, Wright State University - Main CampusFollow
P. C. Colter

Document Type

Article

Publication Date

7-1-1983

Abstract

Recently we have reproducibly grown vapor-phase epitaxial GaAs, with less than 10% compensation, in an AsC1₃-Ga-H₂ reactor. The low-temperature electrical properties of such samples are quite interesting, with neutral-impurity scattering and screening being much more important than usual. The Hall mobility is typically above 10⁵ cm²/V sec at 5 K and has two maxima as a function of temperature, the usual one near 50 K and another near 9 K, The latter phenomenon has not been observed before, to our knowledge, The mobility and carrier concentration temperature dependences for a low-compensation sample and a normal-compensation sample are theoretically fitted to determine the donor and acceptor concentrations. The low-compensation sample has N_A/N_D =0.06 +/- 0.03.

Comments

The original publication is available at http://prb.aps.org/abstract/PRB/v28/i2/p1151_1

Repository Citation

Look, D. C., & Colter, P. C. (1983). Electrical-Properties of Low-Compensation GaAs. Physical Review B, 28 (2), 1151-1153.
https://corescholar.libraries.wright.edu/physics/188

DOI

10.1103/PhysRevB.28.1151