Document Type

Article

Publication Date

8-1-1983

Abstract

We have used a two-band model (heavy and light holes) to calculate the transport properties ofp-type GaAs. The scattering mechanisms included are acoustic-mode deformation potential, acoustic-mode piezoelectric potential, polar- and nonpolar-mode deformation potential, ionized impurity, and space charge. Interband scattering is included explicitly for the optical phonons and phenomenologically for the acoustic phonons. The intraband polar optical-mode scattering, for which a relaxation time cannot be defined, was calculated by using the numerical method of Fletcher and Butcher. The acoustic deformation-potential parameter and the coupling coefficient for interband scattering were calculated by fitting the theory to Hall-mobility data for both pure and doped samples. We have determined ionized-impurity and space-charge contributions for two of our samples, one doped with Cr and exhibiting an 0.33-eV activation energy (Cr4+/Cr3+), and the other heat-treated and exhibiting an 0.14-eV activation energy. The transport fit was carried out self-consistently with a statistical fit of the p vs T data, to determine the relevant donor and acceptor concentrations. Individual plots of the mobility contributions from the various scattering mechanisms are also presented. Finally, useful plots of the Hall mobility and Hall r factor, as functions of carrier density and compensation ratio, are provided to aid others in the analysis of their samples. An important conclusion of this study is that the light-hole band strongly influences the transport properties, even though its density of states is small compared to that of the heavy-hole band.

Comments

Copyright © 1983, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 54.8, and may be found at http://jap.aip.org/resource/1/japiau/v54/i8/p4446_s1

DOI

10.1063/1.332640

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