930 Ka/CM2 Peak Tunneling Current Density in GaN/Aln Resonant Tunneling Diodes Grown on MOCVD GaN-On-Sapphire Template
Document Type
Article
Publication Date
5-20-2019
Abstract
We report on the design and fabrication of ultrahigh current density GaN/AlN double barrier resonant tunneling diodes grown via rf-plasma assisted molecular-beam epitaxy. The device structure was grown on a metal-organic chemical vapor deposition GaN-on-sapphire template. The devices displayed repeatable room temperature negative differential resistance with peak tunneling current densities (Jp) between 637 and 930 kA/cm2. Analysis of temperature dependent measurements revealed the presence of severe self-heating effects, which allow strong phonon scattering that deteriorates the electron quantum transport. Finally, a qualitative comparison to the same structure grown on a low dislocation density freestanding GaN substrate has shown that sapphire-based templates are a feasible alternative.
Repository Citation
Growden, T.,
Cornuelle, E.,
Storm, D.,
Zhang, W.,
Brown, E.,
Whitaker, L.,
Daulton, J.,
Molnar, R.,
Meyer, D.,
& Berger, P.
(2019). 930 Ka/CM2 Peak Tunneling Current Density in GaN/Aln Resonant Tunneling Diodes Grown on MOCVD GaN-On-Sapphire Template. Applied Physics Letters, 114, 203503.
https://corescholar.libraries.wright.edu/physics/1068
DOI
10.1063/1.5095056
