THz Performance of 1550-Nm-Driven Photoconductive Switches Made From Gaas:ER With Eras Quantum Dots

Authors

A. Mingardi, Wright State University - Main Campus
W. D. Zhang, Wright State University - Main CampusFollow
E. R. Brown, Wright State University - Main CampusFollow

Document Type

Conference Proceeding

Publication Date

1-24-2018

Abstract

Ultrafast 1550-nm extrinsic photoconductivity in GaAs:Er makes it possible to fabricate THz photoconductive devices having performance comparable to GaAs:Er devices based on traditional 780-nm intrinsic photoconductivity. This paper addresses the effect of Er doping concentration and its associated ErAs quantum-dot formation on THz device performance, focusing on photoconductive switches.

Repository Citation

Mingardi, A., Zhang, W., & Brown, E. (2018). THz Performance of 1550-Nm-Driven Photoconductive Switches Made From Gaas:ER With Eras Quantum Dots. Proceedings of the IEEE National Aerospace Electronics Conference, NAECON, 332-334.
https://corescholar.libraries.wright.edu/physics/1077

DOI

10.1109/NAECON.2017.8268796