Photoluminescence in Electrically Reversible (Semiconducting To Semiinsulating) Bulk GaAs

Authors

Phil W. Yu
David C. Look, Wright State University - Main CampusFollow
W. Ford

Document Type

Article

Publication Date

10-1-1987

Abstract

A photoluminescence study has been made of electrically reversible, bulk, liquid-encapsulated Czochralski GaAs at temperatures 2-300 K. The reversibility from the semiconducting to the semi-insulating state is made by slow or fast cooling, respectively, following a 5-h, 950°C heat treatment in an evacuated quartz ampoule. A donor level at E_c - 0.13 eV and two acceptor levels at Ev + 0.069 eV and Ev + 0.174 eV are produced after the heat treatment. Only the acceptor levels were detected by photoluminescence. A tentative model assigning the acceptor to the intrinsic defect pair V_Ga-Ga_As is discussed.

Comments

Copyright © 1987, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 62.7, and may be found at http://jap.aip.org/resource/1/japiau/v62/i7/p2960_s1

Repository Citation

Yu, P. W., Look, D. C., & Ford, W. (1987). Photoluminescence in Electrically Reversible (Semiconducting To Semiinsulating) Bulk GaAs. Journal of Applied Physics, 62 (7), 2960-2964.
https://corescholar.libraries.wright.edu/physics/108

DOI

10.1063/1.339381